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PbEuSeTe/PbSnTe sep. confinement multiple quantum well (SCMQW) diode lasers in the buried heterostructure (BH) configuration were preparedPb_0.981Sn_0.019Te quantum wells 170-220 Å thick and Pb_0.9854Eu_0.0146Se_yTe_1-y barriers 500-1000 Å thick were fabricated in different thickness combinations using mol.-beam epitaxy technol.A record continuous wave operating temperature of 200 K for PnSnTe based devices was achieved.Threshold c.d. as low as 6.67 kA cm ^-2 were measured at 160 K.Lead-salt diode lasers are useful as tunable IR sources for high resolution mol. spectroscopy in the 3-30 μm spectral range.

05 Feb 1996·Applied Physics Letters

Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers

Author: Woods, R. J. ; Feit, Z. ; Mak, P. ; McDonald, M. ; Archambault, V.

Continuous wave (cw) operating temperature of 223 K was achieved with molecular beam epitaxy grown separate confinement buried heterostructure (SCBH) PbTe diode lasers with PbEuSeTe electrical and optical confinement layers. This is the highest cw operating temperature reported for midinfrared diode lasers. The active region of the SCBH diode lasers varies laterally to form a crescent-shaped waveguide with a maximum thickness of 0.15 μm and a lateral width of 2 μm. Exceptionally low threshold currents of 102 mA at 200 K, 166 mA at 210 K, and 249 mA at 215 K were measured.

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