Cryptography is essential to ensure data security in embedded devices that handle sensitive data. SRAM boosts overall performance by temporarily storing cryptographic keys. However, attackers can use side-channel, such as Power Analysis, to exploit power consumption patterns and extract secret keys. Once a key is compromised, encrypted data becomes vulnerable. There are many secure SRAM cell designs available in the literature, but they often degrade other performance parameters. This article presents a novel 10-T SRAM cell design that provides protection against power analysis side-channel attacks (SCA) across all three cell operations, while also maintaining the performance of other key parameters. Monte Carlo simulations were conducted on 1,000 samples each for case when BL = Q and BL ≠ Q during reading, writing, and holding data, using Cadence Virtuoso with a 45-nm technology node at 1V/270°C. Based on these simulations, the mean power difference was evaluated. The proposed P-10T SRAM cell exhibits a 0% mean power difference in all three modes of operation, demonstrating complete resilience to power analysis SCA. The design achieves 84.87% reliability with hold stability, read stability, and write ability values of 429 mV, 242 mV, and 250 mV, respectively. Furthermore, the write power dissipation of P-10T cell is 57.44 μW, which is 1.80 × lower than the power consumed by the conventional 6T cell.