Progress in the development of a semiconductor-based, direct-detection, flat-panel digital radiog. imaging device is discussed.The device consists of a 500 μm thick amorphous selenium sensor coupled to an amorphous silicon thin-film-transistor (TFT) readout matrix.This detector has an active imaging area of 14"×17", 3072×2560 pixels with dimensions 139 μm × 139 μm and a geometrical fill factor of 86 percent.Charges generated primarily as a consequence of photoelec. interaction between the incoming x-rays and Se are integrated on storage capacitors that are located at each pixel.The high elec. field applied across the Se minimizes the lateral spreading of the signal resulting in a significantly higher spatial resolution when compared to conventional film/screen systems used for general radiog.The sensor array is read out one pixel line at a time by manipulating the source and gate lines of the TFT matrix.Data are digitized to 14 bits.The statistical photon counting anal. performed on an early prototype device is discussed.Measurements included modulation transfer function, detector quantum efficiency, linearity, and noise anal.Image anal. included small contrast object visibility studies using a Faxil X-Ray Test Object T016.Advantages of this flat-panel electronic sensor over conventional systems are discussed.