Over the past twenty years or so, glow discharge mass spectrometry (GDMS) has become the industry standard for the analysis of trace elements in metals and semiconductors. A review of its history is followed by a picture of the present situation and a look to where the future may lie. Applications are summarised, including the ability of GDMS to offer depth-resolved data and non-conductor analysis, and the well-documented quantitative nature of the results is reviewed. The effects resulting from the physical properties of the analyte material are discussed at length. Finally, recent work such as "fast flow" sources and pulsed glow discharges is reviewed.

Abstracts of Papers, 221st ACS National Meeting, San Diego, CA, United States, April 1-5, 2001

Novel application of Glow Discharge Mass Spectrometry (GDMS) for the trace elemental analysis of sub-micron thin films

Author: Efimov, Alexandre ; Kasic, Martin ; Putyera, Karol

A new GDMS procedure was developed and successfully applied for the anal. of critical trace elements in metallic, semiconductor and dielec. thin films of 100 - 500 nm thickness.This procedure allows for characterization of both the averaged trace elemental concentration in the analyzed layer and elemental depth profile with sufficient resolution, of 10 - 50 nm.Examples of anal. include (Cu, Pt)/Si, GaN/Al₂O₃, AlGaAs/GaAs, InGaAs/GaAs and dielec. films on metal and non-conductive substrates.The newly developed anal. method might be considered as a substitution of SIMS for several materials, like nitride semiconductors, dielec. thin films and large area metallic films on non-conductive substrates.

Trace elemental analysis of InP and related process materials by glow-discharge mass-spectrometry (GDMS)

Author: Efimov, Alexandre ; Moreau, Olivier ; Kasik, Martin ; Putyera, Karol

The development of growth technol. for undoped or low level Fe-doped In phosphide (InP) single crystals and epitaxial layers often requires evaluation of residual impurities at concentration levels <10¹⁵ at/cm³.Glow discharge mass spectrometry (GDMS) is well recognized as an anal. tool for trace impurity anal. in various semiconductors and related process materials.In the recent paper the authors present various aspects of application of GDMS for the anal. of bulk and epitaxial InP along with process materials.The following subjects are addressed: general description of anal. technique; phys. aspects of d.c. glow-discharge in semi-insulating compound semiconductors; anal. aspects of GDMS in application to InP; a description of the most common trace impurities found in InP and related process materials, and some examples of GDMS application in material science of InP such as a revealing of the longitudinal impurity inhomogeneity in single crystals and elemental depth profile in epitaxial InP.

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