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A report is presented on a study of single emitter layer metal base transistors with a base terminal made of aluminum grids.The latter exhibits low operating voltage associated to the high resistivity of the collector terminal and also shows very low leakage current.With such a single emitter layer, common-emitter current gain, on/off current ratio, and cutoff frequency of, resp., 239.62, 3.8 × 10⁷, and 1.4 MHz, were obtained.

01 Jul 2011·IEEE Electron Device Letters

Metal-Base Transistor With $\hbox{C}_{70}$

Author: Holz, Eikner ; Yusoff, Abd Rashid Bin Mohd. ; Shuib, Saiful Anuar ; Song, Ying ; Schulz, Dietmar

In this letter, we propose an organic transistor using a C₇₀ sandwich emitter to reduce the leakage current.An OFF-state leakage current that is smaller than 10^-10 (min. of 1 × 10^-11 A) can be achieved (from V_CE = 0-5 V and I_B = 0).The substantially reduced leakage current results in an excellent on-to-off current ratio that is up to 1.8 × 10⁶.A small magnetocurrent effect of about 15% is obtained with an optimum emitter thickness.

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