HfZrOx films were grown by atomic layer deposition(ALD) at 280{degree sign}C, by co-injection of TDEAH and TDEAZ, and the lamination of HfOx and ZrOx, respectively. The film was exposed under O2, H2 and NH3 plasma, generated by 350 kHz AC generator. The film by co-injection showed Zr content higher than Hf with same flow rate of the precursors, although, in the laminated film, the composition of Hf and Zr was the same. The film grown by co-injection crystallizes less after annealing by RTA, which seems to be due to a higher Zr content. The leakage current of the film grown by co-injection was much higher than that of laminated film. However, after plasma treatments, it became strongly improved regardless of gases. Oxygen plasma treatment was most effective way to improve leakage current and it suggest that removing oxygen vacancy is important for HfZrOx as a capacitor dielectric.

18 Jul 2007·ECS Transactions

WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications

Author: Seo, T. W. ; You, D. H. ; Kim, S. H. ; Lee, K. H. ; Lee, S. K.

Highly conformal and stable WN film was fabricated by atomic layer deposition method (ALD) using BTBMW (bis(tert- butylimido)-bis-(dimethylamido)tungsten, C12H30N4W) and NH3, and deposition temperature was 360{degree sign}C. Amorphous phase was maintained up to 700{degree sign}C after rapid thermal annealing (RTA). To improve diffusion barrier property, NH3 plasma treatment was done at the nucleation step or after film deposition. Surface morphology, film density and diffusion barrier property of the film were improved by NH3 plasma treatment at the nucleation step, and also aging effect of the sheet resistance were removed by NH3 post treatment.

18 Jul 2007·ECS Transactions

Recent Trends on the ALD Technology for ULSI Device Fabrication

Author: Lee, K. H. ; Cho, B. C. ; Lee, S. K. ; Seo, T. W. ; Lee, S. J. ; Kim, S. H. ; Lee, J. W. ; Park, S. J. ; Bae, J. S.

Since Al2O3 film by Atomic Layer Deposition (ALD) has successfully been introduced as a capacitor dielectric for DRAM, now it is widely used up to the device of 100nm design rule. At the design rule of 100nm or below, various thin films, such as high k dielectrics for capacitor or gate oxide, metal electrodes for the dielectrics, and diffusion barrier for contact or interconnection are highly required to be developed using ALD technique to overcome various challenges caused by rapid device shrinkage. Thus, ALD technique is now essential for ULSI device fabrication due to its unique features such as excellent step coverage, high quality film structure having low defect density, lower deposition temperature, and precision composition control of multi- component oxide. In this paper, several important technical points of ALD process for ULSI applications were described and discussed with several recent experimental data

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