Clearfield, Inc.

First Page

The effects of RF stress on power and pulsed current-voltage (IV) characteristics of field-plated AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated on two different epitaxial structures are presented.The power degradation characteristics are shown.The RF stress resulted in different degrees of RF voltage and current swing reduction on the two wafers.The current dispersion became more aggravated after RF stress under high quiescent drain bias conditions in one of the structures.

We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN semiconductor–insulator–semiconductor structure. The band structure and the charge distribution are strongly influenced by the piezoelectric effect caused by the mismatch between AlGaN and GaN. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multichannel structures.