BiVO4 is widely used in the construction of photoanodes because of its narrow band gap, sufficient power for oxygen evolution at the valence band position and strong light absorption ability. It is a promising photoelectrochem. water splitting material. However, its electron migration ability is weak, the hole diffusion distance is short, and there is a serious charge recombination problem. Here, we report a composite photoanode with excellent photoelec. properties: Fe2O3/BiVO4, which was prepared by a simple doping method using BiVO4 photoanode as substrate. The formation of heterojunction between BiVO4 and Fe2O3 promotes carrier separation and transfer, and effectively increases carrier d. Simultaneously, Fe2O3 layer provides photocorrosion protection for BiVO4, which enhances the photoelec. performance and stability of BiVO4. In addition, at 1.23 V vs. RHE, the photocurrent d. of the photoanode was 1.3 mA cm-2, 3.25 times that of the pure BiVO4 electrode, and the initial potential shifted neg. by 230 mV. Fe2O3/BiVO4 photoanode shows satisfactory photocurrent d., which provides a feasible scheme for the preparation of new heterogeneous photoanode.